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| 10 -5V -4V 8 -10V -3V Vgs=-3.5V 10 Vds=-5V 8 25C -Id (A) 4 -2.5V -Id (A) 6 6 125C 4 2 -2.0V 2 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 300 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 250 1.6 1.4 Vgs=-10V Vgs=-4.5V Rds(on) (m:) Vgs=-2.5V 200 Vgs=-4.5V 150 Vgs=-2.5V 1.2 1 0.8 Id=-1A 100 0 1 2 3 Vgs=-10V 4 5 6 0 25 50 75 100 125 150 175 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 350 Id=-1A 300 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 250 -Is (A) 125C 200 150 25C 100 50 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-15V Id=-1A 4 600 500 Ciss Capacitance (pF) -Vgs (Volts) 400 300 200 Coss 100 0 Crss 3 2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.00 Tj(max)=150C Ta=25C 10.00 14 12 100Ps 1ms 0.1s 10ms 10Ps 10 Tj(max)=150C Ta=25C -Id (Amps) Power (W) Rds(on) limited 1.00 8 6 4 0.10 1s 10s DC 2 0 0.001 0.01 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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